inchange semiconductor product specification silicon pnp power transistors mj15023 MJ15025 description ? with to-3 package ? complement to type mj15022; mj15024 ? excellent safe operating area ? high dc current gain h fe = 15 (min) @ i c = 8 adc applications ? designed for high power audio, disk head positioners and other linear applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit mj15023 -350 v cbo collector-base voltage MJ15025 open emitter -400 v mj15023 -200 v ceo collector-emitter voltage MJ15025 open base -250 v v ebo emitter-base voltage open collector --5 v i c collector current -16 a i cm collector current-peak -30 a i b base current -5 a p d total power dissipation t c =25 ?? 250 w t j junction temperature 150 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.70 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors mj15023 MJ15025 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit mj15023 -200 v ceo(sus) collector-emitter sustaining voltage MJ15025 i c =-0.1a ;i b =0 -250 v v cesat-1 collector-emitter saturation voltage i c =-8a; i b =-0.8a -1.4 v v cesat-2 collector-emitter saturation voltage i c =-16a; i b =-3.2a -4.0 v v be base-emitter on voltage i c =-8a ; v ce =-4v -2.2 v mj15023 v ce =-150v; i b =0 i ceo collector cut-off current MJ15025 v ce =-200v; i b =0 -0.5 ma mj15023 v ce =-200v; v be(off) =-1.5v i cex collector cut-off current MJ15025 v ce =-250v; v be(off) =-1.5v -0.25 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.5 ma h fe-1 dc current gain i c =-8a ; v ce =-4v 15 60 h fe-2 dc current gain i c =-16a ; v ce =-4v 5 i s/b second breakdown collector current with base forward biased v ce =-50vdc,t=0.5 s, v ce =-80vdc,t=0.5 s,nonrepetitive -5.0 -2.0 a c ob output capacitance i e =0 ; v cb =-10v;f=1.0mhz 600 pf f t transition frequency i c =-1a ; v ce =-10v;f=1.0mhz 4 mhz
inchange semiconductor product specification 3 silicon pnp power transistors mj15023 MJ15025 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)
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